j. c/ 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp darlington power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SB1502 description ? high dc current gain- : hfe= 5000(min)@lc= -4a ? low-collector saturation voltage- : vce(satr -2.5v(max.)@lc= -4a ? complement to type 2sd2275 applications ? designed for power amplifier applications ? optimum for 55w hifi output applications. absolute maximum ratings(ta=25x:) symbol vcbo vceo vebo ic i cm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ tc=25"c collector power dissipation @ ta=25-c junction temperature storage temperature range value -120 -100 -5 -5 -8 60 3.5 150 -55-150 unit v v v a a w c 'c 1 2 3 pin 1.base 2. collector 3. emitter to-3pl package in . * t d \ a uwf u iw !'-**m dim a b c d e f g h j k n p q r u w mm win 2s.50 1950 4.50 0.90 2.30 2.40 10.80 3.10 0^0 20.00 3.90 2.40 3.10 1.90 3.90 2.90 max 20 jo 5.50 1.10 1.20 2.60 11.00 3.30 0.70 21.00 4.10 2.60 3.50 2.10 4.10 3.10 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets nre current before placing orders. quality semi-conductors
silicon pnp darlington power transistor 2SB1502 electrical characteristics tc=25"c unless otherwise specified symbol v(br)ceo vce(sat) vee(sat) icbo iced iebo hpe-1 hpe-2 fi parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product conditions lc= -30ma; ib= 0 lc= -4a; !b= -4ma lc= -4a; ib= -4ma vcb=-120v;ie=0 vce=-100v;ib=0 veb= -5v; lc= 0 lc=-1a; v0e=-5v lc= -4a; vce= -5v lc=-0.5a;vce=-10v min -100 2000 5000 typ. 20 max -2.5 -3.0 -100 -100 -100 30000 unit v v v ua ua ua mhz switching times ton tstg tf turn-on time storage time fall time lc= ~4a; ib1= -is2= -4ma, vcc- -50v 1.0 0.8 1.0 u s 11 s u s hfe_2 classifications q 5000-15000 s 7000-21000 p 8000-30000
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